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| BUZ 80 SIPMOS (R) Power Transistor * N channel * Enhancement mode * Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 80 VDS 800 V ID 3.1 A RDS(on) 4 Package TO-220 AB Ordering Code C67078-S1309-A2 Maximum Ratings Parameter Continuous drain current Symbol Values 3.1 Unit A ID IDpuls 12.5 TC = 28 C Pulsed drain current TC = 25 C Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse IAR EAR EAS 3.1 8 mJ ID = 3.1 A, VDD = 50 V, RGS = 25 L = 62.4 mH, Tj = 25 C Gate source voltage Power dissipation 320 VGS Ptot 20 100 V W TC = 25 C Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 1 Tj Tstg RthJC RthJA -55 ... + 150 -55 ... + 150 1.25 75 E 55 / 150 / 56 C K/W Semiconductor Group 09/96 BUZ 80 Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit V(BR)DSS 800 3 0.1 10 10 3.5 4 V VGS = 0 V, ID = 0.25 mA, Tj = 25 C Gate threshold voltage VGS(th) 2.1 VGS=VDS, ID = 1 mA Zero gate voltage drain current IDSS 1 100 A VDS = 800 V, VGS = 0 V, Tj = 25 C VDS = 800 V, VGS = 0 V, Tj = 125 C Gate-source leakage current IGSS 100 nA 4 VGS = 20 V, VDS = 0 V Drain-Source on-resistance RDS(on) VGS = 10 V, ID = 2 A Semiconductor Group 2 09/96 BUZ 80 Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Transconductance Values typ. max. Unit gfs 1 3.6 900 95 50 - S pF 1350 140 75 ns 15 25 VDS 2 * ID * RDS(on)max, ID = 2 A Input capacitance Ciss Coss - VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance Crss - VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time td(on) VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Rise time tr 65 85 VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Turn-off delay time td(off) 200 270 VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Fall time tf 65 85 VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Semiconductor Group 3 09/96 BUZ 80 Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Reverse Diode Inverse diode continuous forward current IS A 1 370 2.5 3.1 12.5 V 1.3 ns C Values typ. max. Unit TC = 25 C Inverse diode direct current,pulsed ISM - TC = 25 C Inverse diode forward voltage VSD trr Qrr VGS = 0 V, IF = 6.2 A Reverse recovery time VR = 100 V, IF=lS, diF/dt = 100 A/s Reverse recovery charge VR = 100 V, IF=lS, diF/dt = 100 A/s Semiconductor Group 4 09/96 BUZ 80 Power dissipation Ptot = (TC) Drain current ID = (TC) parameter: VGS 10 V 3.2 110 W A Ptot 90 80 70 60 ID 2.4 2.0 1.6 50 40 30 20 0.4 10 0 0 20 40 60 80 100 120 C 160 0.0 0 20 40 60 80 100 120 C 160 1.2 0.8 TC TC Safe operating area ID = (VDS) parameter: D = 0.01, TC = 25C 10 2 Transient thermal impedance Zth JC = (tp) parameter: D = tp / T 10 1 K/W A ID t = 18.0s p ZthJC 10 1 10 0 10 -1 100 s D = 0.50 =V 10 0 DS /I D 1 ms 10 -2 0.20 0.10 0.05 DS (on ) 10 ms R 10 -3 0.02 single pulse 0.01 10 -1 0 10 10 1 10 2 DC 3 V 10 10 -4 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 s 10 0 VDS tp Semiconductor Group 5 09/96 BUZ 80 Typ. output characteristics ID = (VDS) parameter: tp = 80 s , Tj = 25 C 7.0 A 6.0 Typ. drain-source on-resistance RDS (on) = (ID) parameter: tp = 80 s, Tj = 25 C 13 Ptot = 100W l kj i h g [V] V f GS a b 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 9.0 10.0 20.0 11 a b c d e ID 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 b c e RDS (on) 10 9 8 7 6 5 4 3 2 1 0 VGS [V] = a 4.0 4.5 b 5.0 c 5.5 d 6.0 e f 6.5 7.0 g 7.5 h i j k 8.0 9.0 10.0 20.0 c d e f g dh i j k l f g h i j k 1.0 0.5 0.0 0 10 20 30 40 a V 60 0.0 1.0 2.0 3.0 4.0 5.0 A 6.5 VDS ID Typ. transfer characteristics ID = f (VGS) Typ. forward transconductance gfs = f (ID) parameter: tp = 80 s VDS2 x ID x RDS(on)max 5.0 A parameter: tp = 80 s, VDS2 x ID x RDS(on)max 3.0 ID 4.0 3.5 S gfs 2.0 3.0 2.5 2.0 1.0 1.5 1.0 0.5 0.5 0.0 0 1 2 3 4 5 6 7 8 V 10 0.0 0.0 1.5 0.5 1.0 1.5 2.0 2.5 3.0 VGS A ID 4.0 Semiconductor Group 6 09/96 BUZ 80 Drain-source on-resistance RDS (on) = (Tj ) parameter: ID = 2 A, VGS = 10 V 19 Gate threshold voltage VGS (th) = (Tj) parameter: VGS = VDS, ID = 1 mA 4.6 V 4.0 16 98% RDS (on) 14 VGS(th) 3.6 3.2 typ 12 10 8 6 4 2 0 -60 -20 20 60 100 C 160 2.8 2.4 2.0 2% 98% typ 1.6 1.2 0.8 0.4 0.0 -60 -20 20 60 100 C 160 Tj Tj Typ. capacitances C = f (VDS) parameter:VGS = 0V, f = 1MHz 10 1 Forward characteristics of reverse diode IF = (VSD) parameter: Tj , tp = 80 s 10 2 nF C 10 0 A IF Ciss 10 1 10 -1 10 0 Coss Tj = 25 C typ Tj = 150 C typ Tj = 25 C (98%) Tj = 150 C (98%) 10 -1 0.0 Crss 10 -2 0 5 10 15 20 25 30 V VDS 40 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD Semiconductor Group 7 09/96 BUZ 80 Avalanche energy EAS = (Tj ) parameter: ID = 3.1 A, VDD = 50 V RGS = 25 , L = 62.4 mH 340 mJ Typ. gate charge VGS = (QGate) parameter: ID puls = 5 A 16 V EAS 280 VGS 12 240 10 200 8 0,2 VDS max 0,8 VDS max 160 120 80 6 4 40 0 20 40 60 80 100 120 C 160 2 0 0 10 20 30 40 50 nC 70 Tj Q Gate Drain-source breakdown voltage V(BR)DSS = (Tj ) 960 V 920 V(BR)DSS 900 880 860 840 820 800 780 760 740 720 -60 -20 20 60 100 C 160 Tj Semiconductor Group 8 09/96 BUZ 80 Package Outlines TO-220 AB Dimension in mm Semiconductor Group 9 09/96 |
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